ace 3400 n - channel enhancement mode mosfet ver 1. 4 1 d escription the ace 3400 is the n - channel logic enhancement mode power field effect transistors are produced using high cell density, dmos trench technology. this high density process is especially tailored to minimize on - state resistance. these devices a re particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in - line power loss are needed in a very small outline surface mount package. features ? 30v/ 5.4 a, r d s(on) = 3 8m@v gs =10v ? 30v/ 4 .6a, r ds(on) = 42 m@v gs =4.5v ? 30v/3.8a, r ds(on) =55m@v gs =2.5v ? super high density cell design for extremely low r ds(on) ? exceptional on - resistance and maximum dc current capability application ? power management in note book ? portable equ ipment ? battery powered system ? dc/dc converter ? load switch ? dsc ? lcd display inverter absolute maximum ratings p arameter s ymbol m ax u nit drain - source voltage v dss 30 v gate - source voltage v gss 12 v continuous drain current (t j =150 ) t a =25 i d 4.5 a t a =70 3.5 pulsed drain current i dm 25 a continuous source current (diode conduction) i s 1.7 a power dissipation t a =25 p d 2.0 w t a =70 1. 3 operating junction temperature t j 150 o c storage temperature range t stg - 55/150 o c thermal resistance - junc tion to ambient r ja 9 0 o c /w
ace 3400 n - channel enhancement mode mosfet ver 1. 4 2 packaging type sot - 23 - 3 l 3 1 2 ordering information ace 3400 xx + h electrical characteristics t a =25 , unless other wise noted parameter symbol conditions min. typ. max. unit static drain - source breakdown voltage v (br)dss v gs =0v, i d =250 ua 30 v gate threshold voltage v gs(th) v d =vgs, i d =250ua 0.8 1.6 gate leakage current i gss v ds =0v,v gs = 12 v 100 na zero gate voltage drain current i dss v ds =24v, v gs = 1. 0v 1 ua v ds =24v, v gs =0v t j = 5 5 10 on - state drain current i d(on) vds R 4. 5v, v gs = 4.5 v 10 a drain - source on - resistance r ds(on) v gs =10v, i d = 5.4 a 0.030 0.0 3 8 v gs = 4.5 v, i d = 4.6 a 0.034 0.042 v gs = 2.5 v, i d = 3.8 a 0.0 4 0 0.0 55 forward transconductance gfs v ds = 4.5 v,i d = 5.4 a 1 2 s diode forward voltage v sd i s = 1.7 a, v gs =0v 0.8 1.2 v dynamic total gate charge q g v ds =15v, v gs =10v, i d = 6.7 a 10 18 nc gate - source charge q gs 1.6 gate - drain charge q gd 3 .2 input capacitance ciss v ds =15, v gs =0v, f=1mhz 450 pf output capacitance coss 240 sot - 23 - 3 l description 1 gate 2 source 3 drain halogen - free b m : sot - 23 - 3 l pb - free
ace 3400 n - channel enhancement mode mosfet ver 1. 4 3 reverse transfer capacitance crss 38 turn - on time td(on) v dd =15v, r l =15, i d =1.0a, v gen =10v, r g =6 7 15 ns tr 10 20 turn - off time td(off) 20 4 0 tf 11 2 0 typical performance characteristics output characte ristics transfer characteristics v ds - drain - to - source voltage (v) v gs - gate - to - source voltage (v) on - resistance vs. drain current capacitance i d - drain current (a) v ds - drain - to - source voltage (v)
ace 3400 n - channel enhancement mode mosfet ver 1. 4 4 typical performance characteristics gate charge on - resistance vs. junction te mperature q g - total gate charge (nc) t j - junction temperature ( ) source - drain diode forward voltage on - resistance vs. gate - to - source voltage v sd - source - to - drain voltage (v) v gs - gate - to - source voltage (v)
ace 3400 n - channel enhancement mode mosfet ver 1. 4 5 typical performance characteristics threshold voltage single puls e power t j - temperature( ) time (sec) normalized thermal transient impedance, junction - to foot square wave pulse duration
ace 3400 n - channel enhancement mode mosfet ver 1. 4 6 packing information sot - 23 - 3 l
ace 3400 n - channel enhancement mode mosfet ver 1. 4 7 notes ace does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ace electronics co., ltd. as sued herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ace technology co., ltd. http://www.ace - ele.com/
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